| PART |
Description |
Maker |
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| MG1041 MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1 |
23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE
GUNN Diodes Anode Heat Sink
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| AH445-70 AH491-70 AH490-00 AH491-71 AH618-00 AH370 |
10 GHz - 11 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
12 GHz - 13.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
16.5 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
46 GHz - 50 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
20 GHz - 22 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 20 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
ATMEL CORP
|
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| CMM1530-LC CMM1530-LC-00S0 CMM1530-LC-00ST CMM1530 |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier 1.85.91 GHz.0V0 dBm的， PCN持有LCC - 8功率放大
|
MIMIX BROADBAND INC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
CELERITEK
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| AA026P2-A4 |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:20; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 23.5-26.5 GHz的表面贴装中等功率放大器
23.5-26.5 GHz Surface Mount Medium Power Amplifier
23.526.5 GHz Surface Mount Medium Power Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
